Author:
Kukushkin S. A.,Osipov A. V.
Subject
Materials Chemistry,Metals and Alloys,Inorganic Chemistry,General Chemical Engineering
Reference63 articles.
1. Kukushkin, S.A. and Osipov, A.V., New method for growing silicon carbide on silicon by solid-phase epitaxy: model and experiment, Phys. Solid State, 2008, vol. 50, no. 7, pp. 1238–1245. https://doi.org/10.1134/S1063783408070081
2. Kukushkin, S.A., Osipov, A.V., and Feoktistov, N.A., RF Patent 2363067, 2009.
3. Kukushkin, S.A. and Osipov, A.V., Nano-SiC na Si—novyi material dlya mikro- i optoelektroniki (Nano-SiC on Si is a New Material for Micro- and Optoelectronics), Moscow: Inst. Probl. Tochn. Mekh. Upr., Ross. Akad. Nauk, 2006.
4. Kukushkin, S.A. and Osipov, A.V., Quantum mechanical theory of epitaxial transformation of silicon to silicon carbide, J. Phys. D: Appl. Phys., 2017, vol. 50, art. ID 464006. https://doi.org/10.1088/1361-6463/aa8f69
5. Kukushkin, S.A. and Osipov, A.V., Thin-film heteroepitaxy by the formation of the dilatation dipole ensemble, Dokl. Phys., 2012, vol. 57, no. 5, pp. 217–220. https://doi.org/10.1134/S1028335812050072
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