Nanoindentation of AlGaN Films Formed on SiC/Si Substrates Grown by the Method of Coordinated Substitution of Atoms
Author:
Publisher
Allerton Press
Subject
General Physics and Astronomy,Mechanics of Materials
Link
https://link.springer.com/content/pdf/10.3103/S0025654423700164.pdf
Reference17 articles.
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2. S. A. Kukushkin and A. V. Osipov, “Epitaxial Silicon Carbide on Silicon. Method of coordinated substitution of atoms (A review),” Russ. J. Gen. Chem. 92, 584–610 (2022). https://doi.org/10.1134/S1070363222040028
3. S. Y. Karpov, N. I. Podolskaya, I. A. Zhmakin, and A. I. Zhmakin, “Statistical model of ternary group-III nitrides,” Phys. Rev. B 70, 235203 (2004). https://doi.org/10.1103/PhysRevB.70.235203
4. S. A. Kukushkin, S. S. Sharofidinov, A.V. Osipov, et al., “Self-organization of the composition of AlxGa1 – xN films grown on hybrid SiC/Si substrates,” Phys. Solid State 63, 442–448 (2021). https://doi.org/10.1134/S1063783421030100
5. S. S. Sharofidinov, S. A. Kukushkin, M. V. Staritsyn, et al., “Structure and properties of composites based on aluminum and gallium nitrides grown on silicon of different orientations with a buffer layer of silicon carbide,” Phys. Solid State, No. 5, 516 (2022). https://doi.org/10.21883/PSS.2022.05.53510.250
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1. Nanoindentation of Nano-SiC/Si Hybrid Crystals and AlN, AlGaN, GaN, Ga2O3 Thin Films on Nano-SiC/Si;Mechanics of Solids;2024-04
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