Thin-film heteroepitaxy by the formation of the dilatation dipole ensemble-Reference-Cited by-同舟云学术

Thin-film heteroepitaxy by the formation of the dilatation dipole ensemble

Published:2012-05 Issue:5 Volume:57 Page:217-220
ISSN:1028-3358
Container-title:Doklady Physics
language:en
Short-container-title:Dokl. Phys.

Author:

Kukushkin S. A.,Osipov A. V.

Publisher

Pleiades Publishing Ltd

Subject

General Physics and Astronomy,Mechanics of Materials,Computational Mechanics

Link

http://link.springer.com/content/pdf/10.1134/S1028335812050072.pdf

Reference7 articles.

1. III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics, Ed. by M. Li, A. Mastro, and A. Dadgar (CRC Press, Boca Raton, 2011).

2. J. Eshelby, in Continual Theory of Dislocations (IL, Moscow, 1968) [in Russian].

3. K. Teodosiu, Elastic Models of Defects in Crystals (Mir, Moscow, 1985) [in Russian].

4. S. A. Kukushkin and A. V. Osipov, Phys. Sol. St. 50(7), 1238 (2008).

5. V. K. Vainshtein, V. M. Fridkin, and V. L. Indenbom, in Modern Crystallography (Nauka, Moscow, 1979), Vol. 2 [in Russian].

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