1. Zainabidinov, S.Z., Fizicheskie osnovy obrazovaniya glubokikh urovnei v kremnii (Physical Mechanisms of Deep Level Formation in Silicon), Tashkent: Fan, 1984.
2. Fistul’, V.I., Atomy legiruyushchikh primesei v poluprovodnikakh (Dopant Atoms in Semiconductors), Moscow: Nauka, 2004.
3. Gorelik, S.S. and Dashevskii, M.Ya., Materialovedenie poluprovodnikov i dielektrikov (Semiconductor and Dielectric Materials Research), Moscow: Nauka, 2003.
4. Zainabidinov, S.Z., Turaev, A.R., Karimberdiev, Kh.Kh., and Kholbekov, A., Influence of cooling rate on the formation of impurity silicides in Si, Turkish
J. Phys., 1994, no. 2, pp. 129–132.
5. Zainabidinov, S.Z., Musaev, K.N., Turgunov, N.A., and Turaev, A.R., Dopant microassociation mechanisms in Si〈Mn〉 and Si〈Ni〉, Inorg. Mater., 2012, vol. 48, no. 11, pp. 1065–1069.