Dopant microassociation mechanisms in Si〈Mn〉 and Si〈Ni〉-Reference-Cited by-同舟云学术

Dopant microassociation mechanisms in Si〈Mn〉 and Si〈Ni〉

Published:2012-10-09 Issue:11 Volume:48 Page:1065-1069
ISSN:0020-1685
Container-title:Inorganic Materials
language:en
Short-container-title:Inorg Mater

Author:

Zainabidinov S. Z.,Musaev K. N.,Turgunov N. A.,Turaev A. R.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Metals and Alloys,Inorganic Chemistry,General Chemical Engineering

Link

http://link.springer.com/content/pdf/10.1134/S0020168512110192.pdf

Reference14 articles.

1. Fistul’, V.I., Atomy legiruyushchikh primesei v poluprovodnikakh (Dopant Atoms in Semiconductors), Moscow: Fizmatlit, 2004.

2. Milnes, A.G., Deep Impurities in Semiconductors, New York: Wiley, 1973.

3. Petukhov, B.V., Drag Exerted on Dislocation Kinks in Solid Solutions, Fiz. Tverd. Tela, 2007, vol. 49, no. 2, pp. 251–255.

4. Swalin, R.A., Thermodynamics of Solids, New York: Wiley, 1962.

5. Fistul’, V.I., Kazakova, V.M., Bobrovnikov, Yu.A., et al., State of Manganese Atoms in Silicon, Fiz. Tekh. Poluprovodn. (Leningrad), 1982, vol. 16, no. 5, pp. 939–942.

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