Accumalations of impurity Ni atoms and their effect on the electrophysical properties of Si

Abstract

In this work, the electrophysical parameters of silicon doped with nickel by the diffusion method, are studied as well as the morphological parameters of micro- and nanoinclusions of nickel atoms formed in silicon. At the same time, the diffusion of nickel into silicon was carried out in a SUOL-4M furnace at a temperature of T=1573 K for t=2 hours. The results of studies of the temperature dependence of the concentration, mobility and resistivity of n-Siz<Ni> samples, obtained using the Hall effect method using the Ecopia HMS-7000 setup, are presented. The morphological parameters of impurity atom clusters in n-Si<Ni> samples were also studied and their images were obtained using a JSM-IT200 scanning electron microscope.