Effect of annealing in an atomic-hydrogen atmosphere on the properties of amorphous hydrated silicon films and the parameters of p-i-n structures based on them-Reference-Cited by-同舟云学术

Effect of annealing in an atomic-hydrogen atmosphere on the properties of amorphous hydrated silicon films and the parameters of p-i-n structures based on them

Published:1998-05 Issue:5 Volume:32 Page:555-561
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Mezdrogina M. M.,Abramov A. V.,Mosina G. N.,Trapeznikova I. N.,Patsekin A. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187437.pdf

Reference8 articles.

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3. O. A. Golikova, M. M. Kazanin, O. I. Kon’kov, V. Kh. Kudoyarova, and E. I. Terukov, [Fiz. Tekh. Poluprovodn. 30, 405 (1996) [Semiconductors 30, 226 (1996)].

4. O. A. Golikova, M. M. Kazanin, and Kh. Yu. Mavlyanov, Fiz. Tekh. Poluprovodn. 28, 1329 (1994) [Semiconductors 28, 752 (1994)].

5. K. Asano, Appl. Phys. Lett. 56, 533 (1989).

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