Transformation of an unordered structural network in amorphous hydrogenated silicon films as a result of doping with boron-Reference-Cited by-同舟云学术

Transformation of an unordered structural network in amorphous hydrogenated silicon films as a result of doping with boron

Published:2000-03 Issue:3 Volume:34 Page:348-352
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Mezdrogina M. M.,Patsekin A. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187984.pdf

Reference15 articles.

1. P. G. Le Comber and W. E. Spear, J. Non-Cryst. Solids 35–36, 327 (1980).

2. O. A. Golikova, U. S. Babakhodzhaev, V. V. Dubro, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 26, 66 (1992) [Sov. Phys. Semicond. 26, 38 (1992)].

3. M. M. Mezdrogina, O. A. Golikova, M. M. Kazanin, et al., Zh. Tekh. Fiz. 62, 108 (1992) [Sov. Phys. Tech. Phys. 37, 55 (1992)].

4. M. M. Mezdrogina, A. V. Abramov, G. N. Mosina, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 32, 555 (1998) [Semicond. 32, 555 (1998)].

5. A. R. Regel’, P. P. Seregin, M. M. Mezdrogina, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 22, 161 (1988) [Sov. Phys. Semicond. 22, 100 (1988)].

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Identification of Impurities in Diborane by Gas Chromatography–Mass Spectrometry;Inorganic Materials: Applied Research;2024-04

2. Structural Defects and Electrical Conductivity in Nanocrystalline SiC:H Films Doped with Boron and Grown by Photostimulated Chemical-Vapor Deposition;Semiconductors;2005