Low-noise photodiodes based on GaSb/GaInAsSb/AlGaAsSb double heterostructures for the 1–4.8 μm spectral range-Reference-Cited by-同舟云学术

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Low-noise photodiodes based on GaSb/GaInAsSb/AlGaAsSb double heterostructures for the 1–4.8 μm spectral range

Published:2008-04 Issue:4 Volume:42 Page:458-462
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Zhurtanov B. E.,Il’inskaya N. D.,Imenkov A. N.,Mikhaĭlova M. P.,Kalinina K. V.,Sipovskaya M. A.,Stoyanov N. D.,Yakovlev Yu. P.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782608040155.pdf

Reference6 articles.

1. Anal. Chem. 28(8), 219 (1956).

2. A. P. Astakhova, B. E. Zhurtanov, A. N. Imenkov, et al., Pis’ma Zh. Tekh. Fiz. 33(1), 23 (2007) [Tech. Phys. Lett. 33, 11 (2007)].

3. A. P. Astakhova, B. E. Zhurtanov, A. N. Imenkov, et al., Pis’ma Zh. Tekh. Fiz. 33(19), 9 (2007) [Tech. Phys. Lett. 33, 809 (2007)].

4. Handbook Series on Semiconductor Parameters, Ed. by M. Levinshtein, S. Rumyantsev, and M. Shur (World Sci., Singapore, 1996), Vols. 1, 2.

5. A. A. Andaspaeva, A. N. Baranov, B. L. Gel’mont, et al., Fiz. Tekh. Poluprovodn. 25, 394 (1991) [Sov. Phys. Semicond. 25, 240 (1991)].

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