High-voltage (1800 V) planar 4H-SiC p-n junctions with floating guard rings-Reference-Cited by-同舟云学术

High-voltage (1800 V) planar 4H-SiC p-n junctions with floating guard rings

Published:2009-04 Issue:4 Volume:43 Page:505-507
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Ivanov P. A.,Grekhov I. V.,Il’inskaya N. D.,Samsonova T. P.,Potapov A. S.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782609040186.pdf

Reference9 articles.

1. I. V. Grekhov, P. A. Ivanov, N. D. Il’inskaya, O. I. Kon’kov, A. S. Potapov, and T. P. Samsonova, Fiz. Tekh. Poluprovodn. 42, 211 (2008) [Semiconductors 42, 211 (2008)].

2. P. A. Ivanov, I. V. Grekhov, A. S. Potapov, and T. P. Samsonova, Fiz. Tekh. Poluprovodn. 42, 878 (2008) [Semiconductors 42, 858 (2008)].

3. V. Anantharam and K. N. Bhat, IEEE Trans. Electron. Dev. ED-27, 939 (1980).

4. P. A. Ivanov, I. V. Grekhov, N. D. Il’inskaya, and T. P. Samsonova, Fiz. Tekh. Poluprovodn. 39, 1475 (2005) [Semiconductors 39, 1426 (2005)].

5. D. C. Sheridan, G. Niu, J. N. Merrett, J. D. Cressler, C. Ellis, and C.-C. Tin. Solid State Electron. 44, 1367 (2000).

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