Author:
Sedykh S V,Rybalka S B,Kulchenkov E A,Demidov A A,Drakin A Yu,Bryukhno N A,Kuftov I V
Abstract
Abstract
The test element for quality control of SiC Schottky type high voltage diodes has been constructed at first in this study. It is shown that proposed test element give possibility for determination of important parameters for testing diode before Schottky contact formation and therefore can be decrease production costs in production of SiC Schottky type high voltage diodes.
Subject
General Physics and Astronomy