Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures-Reference-Cited by-同舟云学术

Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures

Published:2011-10 Issue:10 Volume:45 Page:1352-1356
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Tikhomirov V. G.,Maleev N. A.,Kuzmenkov A. G.,Solov’ev Yu. V.,Gladyshev A. G.,Kulagina M. M.,Zemlyakov V. E.,Dudinov K. V.,Yankevich V. B.,Bobyl A. V.,Ustinov V. M.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782611100216.pdf

Reference11 articles.

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3. V. Palankovski, R. Quay, and S. Selberherr, IEEE J. Solid State Circuits 36, 1365 (2001).

4. SILVACO International, ATLAS User’s Manual, Device Simulation Software (Santa Clara, CA, 2008).

5. V. E. Zemlyakov, V. A. Krasnik, V. I. Vasil’ev, S. A. Legenkin, N. A. Maleev, A. E. Zhukov, A. P. Vasil’ev, V. S. Mikhrin, and V. M. Ustinov, in Proceedings of the 15th International Conference on Microwave Telecommunication Technology CriMiCo’2005, Sevastopol, Crimea, Ukraine, Sept. 12–16, 2005.

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