High-voltage (3.3 kV) 4H-SiC JBS diodes-Reference-Cited by-同舟云学术

High-voltage (3.3 kV) 4H-SiC JBS diodes

Published:2011-05 Issue:5 Volume:45 Page:668-672
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Ivanov P. A.,Grekhov I. V.,Il’inskaya N. D.,Kon’kov O. I.,Potapov A. S.,Samsonova T. P.,Serebrennikova O. U.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782611050125.pdf

Reference12 articles.

1. A. Slabukhin, Komponent. Tekhnol., No. 2, 114 (2005).

2. A. Polishchuk, Silov. Elektron. No. 1, 34 (2006).

3. http://www.cree.com/products/power-docs2.asp

4. I. V. Grekhov, P. A. Ivanov, N. D. Il’inskaya, O. I. Kon’kov, A. S. Potapov, and T. P. Samsonova, Fiz. Tekh. Poluprovodn. 42, 211 (2008) [Semiconductors 42, 211 (2008)].

5. P. A. Ivanov, I. V. Grekhov, N. D. Il’inskaya, T. P. Samsonova, and A. S. Potapov, Fiz. Tekh. Poluprovodn. 43, 527 (2009) [Semiconductors 43, 505 (2009)].

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