Silicon carbide of 4H-SiC type Schottky diode current-voltage characteristics in small-sized type metal-polymeric package SOT-89

Abstract

Abstract The forward and reverse current–voltage characteristics of Ti/Al/4H-SiC Schottky diode type DDSH411A91 in modern small-sized (SOT-89) type metal-polymeric package have been obtained. In forward direction (current up to 2 A) on the basis of analysis it is shown that Schottky diode corresponds to the "ideal" diode with ideality factor n=1.12 and effective Schottky barrier height φB =1.2 eV. It is shown that reverse current-voltage characteristics (breakdown voltage 1200 V) can be well approximated by mechanism of field dependence of barrier height lowering by the presence of the intermediate layer in the form of oxide on the 4H-SiC surface.