Effect of p-n junction overheating on degradation of silicon high-power pulsed IMPATT diodes-Reference-Cited by-同舟云学术

Effect of p-n junction overheating on degradation of silicon high-power pulsed IMPATT diodes

Published:2011-02 Issue:2 Volume:45 Page:253-259
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Belyaev A. E.,Basanets V. V.,Boltovets N. S.,Zorenko A. V.,Kapitanchuk L. M.,Kladko V. P.,Konakova R. V.,Kolesnik N. V.,Korostinskaya T. V.,Kritskaya T. V.,Kudryk Ya. Ya.,Kuchuk A. V.,Milenin V. V.,Ataubaeva A. B.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782611020047.pdf

Reference18 articles.

1. A. S. Tager and V. M. Val’d-Perlov, Avalanche-Transit-Time Diodes and Their Applications in UHF Electronics (Sov. Radio, Moscow, 1968), ch. 9, p. 374; ch. 7, p. 335 [in Russian].

2. A. K. Shukhostanov, Avalanche-Transit-Time Diodes. Physics, Technology, Application (Radio i svyaz’, Moscow, 1997), ch. 7, p. 157 [in Russian].

3. L. V. Kasatkin and V. P. Rukin, Izv. Vyssh. Uchebn. Zaved., Ser. Radioelektron. 48(6), 3 (2005).

4. L. V. Kasatkin and V. E. Chaika, Semiconductor Devices of Millimeter Range (Sevastopol’, Veber, 2006) ch. 1, p. 32; ch. 2, p. 132 [in Russian].

5. G. Haddad and R. Trew, IEEE Trans. MTT-S 50, 760 (2002).

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