Publisher
National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference39 articles.
1. 1. Read Jr W.T. A proposed high-frequency, negative-resistance diode. Bell System Technical Journal. 1958. 37, No. 2, P. 401-446. https://doi.org/10.1002/j.1538-7305.1958.tb01527.x
2. 2. Sze S.M, Ng Kwok K. Physics of Semiconductor Devices. John Wiley & Sons, Inc. 2006.
3. 3. Slipokurov V.S. Results of studying the electrical and physical characteristics of silicon avalanche transit-time diodes. Vishyk Zhytomyr. Derzh. Tekn. Univ., Ser.: Tekhn. Nauky. 2014. 1, No 68. P. 97-101 (in Ukrainian).
4. 4. Acharyya A., Banerjee S., Banerjee J.P. Dependence of DC and small-signal properties of double drift region silicon IMPATT device on junction temperature. Journal of Electron Devices. 2012. 12, P. 725-729.
5. 5. Belyaev A.E., Basanets V.V., Boltovets N.S. et al. Effect of p-n junction overheating on degradation of silicon high-power pulsed IMPATT diodes. Semiconductors. 2011. 45, No. 2. P. 253-259. https://doi.org/10.1134/S1063782611020047.