Specific features of NH3 and plasma-assisted MBE in the fabrication of III-N HEMT heterostructures-Reference-Cited by-同舟云学术

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Specific features of NH3 and plasma-assisted MBE in the fabrication of III-N HEMT heterostructures

Published:2015-01 Issue:1 Volume:49 Page:92-94
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Alexeev A. N.,Krasovitsky D. M.,Petrov S. I.,Chaly V. P.,Mamaev V. V.,Sidorov V. G.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782615010029.pdf

Reference4 articles.

1. S. Lamba et al., Appl. Phys. Lett. 102, 191604 (2013).

2. S. I. Petrov, A. N. Alexeev, D. M. Krasovitsky, and V. P. Chaly, Phys. Status Solidi C 9, 562 (2012).

3. H. M. Ng et al., Appl. Phys. Lett. 73, 821 (1998).

4. J. S. Speck et al., Appl. Phys. Lett. 100, 072107 (2012).

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