Charge-carrier concentration and temperature in quantum wells of laser heterostructures under spontaneous-and stimulated-emission conditions-Reference-Cited by-同舟云学术

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Charge-carrier concentration and temperature in quantum wells of laser heterostructures under spontaneous-and stimulated-emission conditions

Published:2008-06 Issue:6 Volume:42 Page:737-745
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Vorob’ev L. E.,Zerova V. L.,Borshchev K. S.,Sokolova Z. N.,Tarasov I. S.,Belenky G.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782608060171.pdf

Reference24 articles.

1. I. Shtrichman, V. Mizrachi, D. Gershoni, et al., Physica E 7, 237 (2000).

2. D. A. Firsov, L. E. Vorobjev, M. A. Barzilovich, et al., Int. J. Nanosci. 63–4 (2007).

3. C. H. Henry, R. A. Logan, H. Temkin, and F. Ralph Merrit, IEEE J. Quantum Electron. 19, 941 (1983).

4. J. Shah, R. F. Leheny, R. E. Nahory, and H. Temkin, Appl. Phys. Lett. 36, 618 (1981).

5. G. L. Belenky, P. A. Garbinski, S. Luryi, et al., J. Appl. Phys. 73, 8618 (1993).

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