LIGHT EMISSION, ABSORPTION AND AMPLIFICATION IN InAs/GaAs QUANTUM DOTS AND GaAs/AlGaAs QUANTUM WELLS RESULTING FROM OPTICAL PUMPING-Reference-Cited by-同舟云学术

LIGHT EMISSION, ABSORPTION AND AMPLIFICATION IN InAs/GaAs QUANTUM DOTS AND GaAs/AlGaAs QUANTUM WELLS RESULTING FROM OPTICAL PUMPING

Published:2007-06 Issue:03n04 Volume:06 Page:241-244
ISSN:0219-581X
Container-title:International Journal of Nanoscience
language:en
Short-container-title:Int. J. Nanosci.

Author:

FIRSOV D. A.¹,VOROBJEV L. E.¹,BARZILOVICH M. A.¹,YU. PANEVIN V.¹,MIKHAYLOV I. V.¹,FEDOSOV N. K.¹,SHALYGIN V. A.¹,TONKIKH A. A.²,POLYAKOV N. K.²,SAMSONENKO YU. B.²,CIRLIN G. E.²,ZHUKOV A. E.³,PIKHTIN N. A.³,TARASOV I. S.³,USTINOV V. M.³,JULIEN F. H.⁴,SEKOWSKI M.⁵,HANNA S.⁵,SEILMEIER A.⁵

Affiliation:

1. Radiophysical Department, St. Petersburg State Polytechnic University, Polytechnicheskaya 29, St. Petersburg 195251, Russia

2. Institute for Analytical Instrumentation, St. Petersburg 198103, Russia

3. Ioffe Physico-Technical Institute, St. Petersburg 194021, Russia

4. Universite Paris-Sud 91405 Orsay, France

5. Experimentalphysik III, Universität Bayreuth, D-95447 Bayreuth, Germany

Abstract

Optical phenomena in quantum dot and quantum well nanostructures aimed at the development of mid-infrared lasers based on intraband electron transitions are investigated in the conditions of interband optical pumping. Evolution of photoluminescence spectra and interband light absorption with intensity of interband optical excitation is investigated in InAs / GaAs quantum dot structures. Optically induced intersubband mid-infrared light absorption is studied in undoped tunnel-coupled GaAs / AlGaAs quantum wells. The stabilization of the electron concentration at the ground level of tunnel-coupled quantum wells under increasing pumping level is established.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Computer Science Applications,Condensed Matter Physics,General Materials Science,Bioengineering,Biotechnology

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0219581X0700464X

Reference3 articles.

1. A dual-color injection laser based on intra- and inter-band carrier transitions in semiconductor quantum wells or quantum dots

2. The outlook for the development of radiation sources in the middle-IR range based on the intraband transitions between the energy levels of charge carriers in injection laser heterostructures with quantum dots and wells

3. Electronic Properties of InAs/GaAs Quantum Dots Covered by an InxGa1-xAs Quantum Well

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