Collector‐up light‐emitting charge injection transistors inn‐InGaAs/InAlAs/p‐InGaAs andn‐InGaAs/InP/p‐InGaAs heterostructures-Reference-Cited by-同舟云学术

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Collector‐up light‐emitting charge injection transistors inn‐InGaAs/InAlAs/p‐InGaAs andn‐InGaAs/InP/p‐InGaAs heterostructures

Published:1993-06-15 Issue:12 Volume:73 Page:8618-8627
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Belenky G. L.,Garbinski P. A.,Luryi S.,Mastrapasqua M.,Cho A. Y.,Hamm R. A.,Hayes T. R.,Laskowski E. J.,Sivco D. L.,Smith P. R.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.353393

Reference35 articles.

1. Charge injection transistor based on real-space hot-electron transfer

2. High‐frequency amplification and generation in charge injection devices

3. High transconductance and large peak‐to‐valley ratio of negative differential conductance in three‐terminal InGaAs/InAlAs real‐space transfer devices

4. High transconductance and large peak‐to‐valley ratio of negative differential conductance in three‐terminal InGaAs/InAlAs real‐space transfer devices

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