Influence of indium doping on the formation of silicon-(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures-Reference-Cited by-同舟云学术

Influence of indium doping on the formation of silicon-(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures

Published:1999-10 Issue:10 Volume:33 Page:1080-1083
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Kunitsyn A. E.,Chaldyshev V. V.,Vul’ S. P.,Preobrazhenskii V. V.,Putyato M. A.,Semyagin B. R.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187869.pdf

Reference16 articles.

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3. N. S. Averkiev, A. A. Gutkin, M. A. Reshchikov, and V. E. Sedov, Fiz. Tekh. Poluprovodn. 30, 1123 (1996) [Semiconductors 30, 595 (1996)].

4. M. Kaminska, Z. Liliental-Weber, E. R. Weber, T. George, J. B. Kortright, F. Smith, B. Y. Tsaur, and A. R. Calawa, Appl. Phys. Lett. 54, 1881 (1989).

5. J. Gebauer, R. Krause-Rehberg, S. Eichler, M. Luysberg, H. Sohn, and E. R. Weber, Appl. Phys. Lett. 71, 638 (1997).

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