Ga vacancies in low-temperature-grown GaAs identified by slow positrons
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119814
Reference19 articles.
1. Structural properties of As‐rich GaAs grown by molecular beam epitaxy at low temperatures
2. Native point defects in low‐temperature‐grown GaAs
3. Electron-paramagnetic-resonance study of GaAs grown by low-temperature molecular-beam epitaxy
4. Mechanism responsible for the semi‐insulating properties of low‐temperature‐grown GaAs
5. The effect of excess gallium vacancies in low‐temperature GaAs/AlAs/GaAs:Si heterostructures
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