COMPLEXES OF SPATIALLY MULTISTABLE DEFECTS AS THE SOURCE OF 1/f NOISE IN GaAs DEVICES

Abstract

In order to determine the origin of 1/f noise in devices made on the basis of GaAs the structure and spatial multistability mechanism of complexes of defects originated by donor–acceptor pairs are researched. Examples of complexes, which potentially exist in n- GaAs : Si , are such pairs as SiAsSiGa , VGaSiGa , VGaVAs , VAsSiAs and VGaISi . For instance, VGaSiGa complex contains a gallium vacancy (VGa) and an atom of silicon (SiGa), which substitutes the nearest atom of gallium in the crystal lattice. The mechanism of spatial multistability of the entire complex of defects is linked with the influence of the Jahn–Teller effect on the complex or one of its elements. The ability of VGaSiGa complex to be one of the sources of 1/f noise is analyzed. It is assumed that 1/f noise may be generated by defects influenced by the Jahn–Teller effect.