1/f Noise in Optical Output and Non-Gaussianity in Voltage Noise of GaAs Nanoscale Light-Emitting Structures

Author:

Belyakov Alexander V.12,Klyuev Alexey V.1,Yakimov Arkady V.1

Affiliation:

1. National Research Lobachevsky State University of Nizhni Novgorod, Gagarin Avenue, 23, Nizhny Novgorod 603950, Russia

2. Mfisoft Ltd, Nartova Street 6, Nizhny Novgorod 603104, Russia

Abstract

The 1/[Formula: see text] noise investigation in nanoscale light-emitting diodes (LEDs) and lasers, based on GaAs and its solid solutions, is presented here. Spectra of 1/[Formula: see text] noise [Formula: see text] in the voltage across terminals of device, and [Formula: see text] in emitted light intensity, as well as the cross-spectrum [Formula: see text], were measured. It was found that the noise in the leakage current, and in the additional nonlinear current, of devices is transformed into the noise in optical output intensity in spontaneous emission regime. We measured the histogram as the estimate of the probability density function of the voltage noise. The obtained data in lasers characterize the non-Gaussianity and/or nonstationarity of the noise in the regime of induced radiation. In contrast, in LEDs the deviation of noise from Gaussianity practically was not observed.

Funder

Ministry of Education and Science of Russia

The Ministry of education and science of the Russian Federation and Lobachevsky State University of Nizhni Novgorod

NATO's Science for Peace

Publisher

World Scientific Pub Co Pte Lt

Subject

General Physics and Astronomy,General Mathematics

Reference42 articles.

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