Author:
Kochergin Viktor S.,Yakimov Arkady V.,Klyuev Alexey V.,Filatov Dmitry O.,Gorshkov Oleg N.,Antonov Dmitry A.,Mikhaylov Alexey N.,Sunyaikin Denis V.,Shtraub Nikolay I.,Vasileiadis Nikolaos,Dimitrakis Panagiotis,Spagnolo Bernardo
Abstract
Abstract
The results of the experimental investigation of the relationship between the low-frequency noise spectrum of the electric current through conducting filaments in Si3N4 films with a thickness of 6 nm on n
++-Si(001) conducting substrates and retention characteristics of these filaments are reported. Two structures are investigated: Si3N4/Si, thin (about 6 nm) Si3N4 film on the n++-Si substrate; Si3N4/SiO2/Si, a similar structure with a 2 nm SiO2 sublayer between the film and the substrate. A detailed comparison of the experimentally extracted parameters, such as average current through the filament, probability density function, and spectrum, is presented with a discussion of possible physical reasons for the difference between the testing structures and their effect on retention characteristics.
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
4 articles.
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