Method for Determining the Most Sensitive Region of an Optocoupler Chip under X-ray-Induced Dose Effects
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Published:2019-11
Issue:6
Volume:48
Page:415-421
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ISSN:1063-7397
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Container-title:Russian Microelectronics
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language:en
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Short-container-title:Russ Microelectron
Author:
Chernyak M. E.,Ranneva E. V.,Ulanova A. V.,Nikiforov A. Yu.,Verizhnikov A. I.,Tsyrlov A. M.,Fedosov V. S.,Shchepanov A. N.,Kalashnikov V. D.,Titovets D. O.
Publisher
Pleiades Publishing Ltd
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Reed, R., Guideline for Ground Radiation Testing and Using Optocouplers in the Space Radiation Environment. http://radhome.gsfc.nasa.gov/radhome/papers, 2002. 2. Pershenkov, V.S., Sogoyan, A.V., and Telets, V.A., Conversion model of radiation-induced interface-trap buildup and the some examples of its application, IOP Conf. Ser.: Mater. Sci. Eng., 2016, vol. 151, no. 1, p. 012001. 3. Sogoyan, A.V., Chumakov, A.I., Smolin, A.A., Ulanova, A.V., and Boruzdina, A.B., A simple analytical model of single-event upsets in bulk CMOS, Nucl. Instrum. Methods Phys. Res.,Sect. B, 2017, vol. 400, pp. 31–36. 4. Akhmetov, A.O., Bobrovskiy, D.V., Tararaksin, A.S., Petrov, A.G., Kessarinskiy, L.N., Boychenko, D.V., Chumakov, A.I., Rousset, A., and Chatry, C., IC SEE comparative studies at UCL and JINR heavy ion accelerators, in Proceedings of the 2016 IEEE Radiation Effects Data Workshop, REDW 2016, Portland, U.S.A., Apr. 3,2017. https://doi.org/10.1109/NSREC.2016.7891720 5. Shvetsov-Shilovskiy, I.I., Boruzdina, A.B., Ulanova, A.V., Orlov, A.A., Amburkin, K.M., and Nikiforov, A.Y., Measurement system for test memory cells based on keysight B1500A semiconductor device analyzer running LabVIEW software, in Proceedings of the 2017 International Siberian Conference on Control and Communications, SIBCON 2017, Astana, Kazakhstan, 29–30 June, 2017.https://doi.org/10.1109/SIBCON.2017.7998542
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