Conversion model of radiation-induced interface-trap buildup and the some examples of its application
Author:
Publisher
IOP Publishing
Subject
General Medicine
Link
http://stacks.iop.org/1757-899X/151/i=1/a=012001/pdf
Reference11 articles.
1. A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures
2. Interface trap generation in silicon dioxide when electrons are captured by trapped holes
3. Characterization of Annealing of Co60 Gamma-Ray Damage at the Si/Si02 Interface
4. Reversibility of trapped hole annealing
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