Modeling neutron ionization effects on high-density CMOS circuit elements
Author:
Publisher
Pleiades Publishing Ltd
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1134/S1063739706030073.pdf
Reference18 articles.
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4. Poivey, C., Carriere, T., Becour, J., and Oldham, T.R., Characterization of SHE in 1Mbit SRAMs from Single Ion, IEEE Trans. Nucl. Sci., 1994, vol. 40, pp. 2235–2239.
5. Granlund, T. et al., Soft Error Rate Increase for New Generation of SRAMs, IEEE Trans. Nucl. Sci., 2003, vol. 50, pp. 2065–2068.
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