Author:
Zebrev Gennady I.,Vatuev Alexander S.,Useinov Rustem G.,Emeliyanov Vladimir V.,Anashin Vasily S.,Gorbunov Maxim S.,Turin Valentin O.,Yesenkov Kirill A.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Cited by
13 articles.
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1. Heavy-Ion Effects in SiC Power MOSFETs With Trench-Gate Design;IEEE Transactions on Nuclear Science;2024-08
2. A Brief Review of Single-Event Burnout Failure Mechanisms and Design Tolerances of Silicon Carbide Power MOSFETs;Electronics;2024-04-09
3. The 4 Watt UHF VDMOS Power Amplifier for Space Applications;2023 IEEE 33rd International Conference on Microelectronics (MIEL);2023-10-16
4. Microdose Effect of SGT MOSFETs induced by Heavy Ions;2023 5th International Conference on Radiation Effects of Electronic Devices (ICREED);2023-05-24
5. Heavy-Ion Charge Yield Measurement by Floating Gate Dosimeters;2021 21th European Conference on Radiation and Its Effects on Components and Systems (RADECS);2021-09