The 4 Watt UHF VDMOS Power Amplifier for Space Applications
Author:
Affiliation:
1. National Research Nuclear University (NRNU) "MEPhI" and Specialized Electronic Systems (SPELS),Moscow,Russia
Funder
Ministry of Education
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10315714/10315787/10315858.pdf?arnumber=10315858
Reference17 articles.
1. Microdose Induced Drain Leakage Effects in Power Trench MOSFETs: Experiment and Modeling
2. Sensitivity of Unbiased Commercial P-channel Power VDMOSFETs to X-ray Radiation;risti?;IEEE 32nd International Conference on Microelectronics (MIEL),2021
3. Defects induced by gamma-ray irradiation and post-irradiation annealing and its influence on the threshold voltage of p-channel power VDMOS transistors
4. Recovery treatment effects on gamma radiation response in electrically stressed power VDMOS transistors
5. Simulation of Synergetic Radiation Effects for P-type bulk VDMOS
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