1. Ferain, I., Colinge, C.A., and Colinge, J.P., Multigate transistors as the future of classical metal-oxide-semiconductor field-effect transistors, Nature (London, U.K.), 2011, vol. 479, pp. 310–316.
2. Neamen, D., Semiconductor Physics and Devices: Basic Principles, New York: McGraw-Hill, 2011.
3. Ghosh, P., Haldar, S., Gupta, R.S., and Gupta, M., An analytical drain current model for dual material engineered cylindrical/surrounded gate MOSFET, Microelectron. J., 2012, vol. 43, pp. 17–24.
4. Kumari, V., Ravish, A., and Babbar, I., A comparative analysis of double material double gate surround gate (DMDG-SG), double material triple gate surround gate (DMTG-SG) and triple material triple gate surround gate (TMTG-SG) MOSFETs, Int. J. Sci. Res. Develop., 2014, vol. 2, no. 3, pp. 141–148.
5. Zhang, L., Ma, C., He, J., Lin, X., and Chan, M., Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET, Solid State Electron., 2010, vol. 54, no. 8, pp. 806–808.