Nano- and micrometer-scale thin-film-interconnection failure theory and simulation and metallization lifetime prediction, Part 1: A general theory of vacancy transport, mechanical-stress generation, and void nucleation under electromigration in relation to multilevel-metallization degeneration and failure-Reference-Cited by-同舟云学术

Nano- and micrometer-scale thin-film-interconnection failure theory and simulation and metallization lifetime prediction, Part 1: A general theory of vacancy transport, mechanical-stress generation, and void nucleation under electromigration in relation to multilevel-metallization degeneration and failure

Published:2009-11 Issue:6 Volume:38 Page:364-384
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Valiev K. A.,Goldstein R. V.,Zhitnikov Yu. V.,Makhviladze T. M.,Sarychev M. E.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S106373970906002X.pdf

Reference42 articles.

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2. Kaur, I., Mishin, Y., and Gust, W., Fundamentals of Grain and Interphase Boundary Diffusion, Chichester: Wiley, 1995, 3rd ed.

3. d’Heurle, F.M. and Rosenberg, R., Electromigration in Thin Films, in Physics of Thin Films: Advances in Research and Development, New York: Academic, 1973, vol. 7, pp. 257–310.

4. Black, J.R., Electromigration Failure Modes in Aluminum Metallization for Semiconductor Devices, in IEEE Int. Reliability Physics Symp. Proc., 1969, vol. 57, pp. 1587–1593.

5. Makhviladze, T.M., Sarychev, M.E., and Valiev, K.A., Modeling of Ion Electromigration Process in Microelectronic Structure, in Proc. 6th Int. Conf. on the Numerical Analysis of Semiconductor Devices and Integrated Circuits (NACE-CODE), Dublin: Boole, 1989, pp. 521–525.

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