Author:
Makhviladze T. M.,Sarychev M. E.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Tu, K.N., Recent advances on electromigration in very-large-scalt-integration of interconnects, J. Appl. Phys., 2003, vol. 94, no. 9, pp. 5451–5473.
2. Valiev, K.A., Goldstein, R.V., Zhitnikov, Yu.V., Makhviladze, T.M., and Sarychev, M.E., Nano- and micrometer-scale thin-film-interconnection failure theory and simulation and metallization lifetime prediction, Part 1: A general theory of vacancy transport, mechanical-stress generation, and void nucleation under electromigration in relation to multilevel-metallization degeneration and failure, Russ. Microelectron., 2009, vol. 38, no. 6, pp. 364–384.
3. Makhviladze, T. and Sarychev, M., Electromigration theory and its applications to integrated circuit metallization, Proc. SPIE, 2010, vol. 7521, p. 752117(15).
4. Zhang, W., Yi, L., Chang, P., and Wu, J., A method for AlCu interconnect electromigration performance predicting and monitoring, Microelectron. Eng., 2008, vol. 85, no. 3, pp. 577–581.
5. Ho, P.S., Solute effects on electromigration, Phys. Rev. B, 1973, vol. 8, no. 10, pp. 4534–4539.
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