1. Materialy elektronnoi tekhniki: uch. dlya stud. vuzov po spets. elektronnoi tekhniki (Materials of Electronic Equipment, The School-Book), Pasynkov, V.V. and Sorokin, V.S., Eds., St. Petersburg: Lan’, 2001.
2. Pivovarenok, S.A., Dunaev, A.V., Efremov, A.M., and Svettsov, V.I., Plasma nanoscale etching of GaAs in chlorine and hydrogen chloride, Nanotekhnika, 2011, no. 1, pp. 69–71.
3. Murin, D.B., Efremov, A.M., Svettsov, V.I., Pivovarenok, S.A., Ovtsyn, A.A., and Shabadarov, S.S., The intensity of radiation and the concentration of active particles in a glow discharge plasma in mixtures of hydrogen chloride with argon and helium, Izv. Vyssh. Uchebn. Zaved.,
Khim. Khim. Tekhnol., 2013, vol. 56, no. 4, pp. 29–32.
4. Murin, D.B., Efremov, A.M., Svettsov, V.I., Pivovarenok, S.A., and Godnev, E.M., Radiation intensities and concentrations of neutral particles in a dc glow discharge plasma in HCl–H2 and HCl–O2 mixtures, Izv. Vyssh. Uchebn. Zaved.,
Khim. Khim. Tekhnol., 2013, vol. 56, no. 8, pp. 41–44.
5. Pivovarenok, S.A., Dunaev, A.V., and Murin, D.B., Kinetics of the interaction between a CCl2F2 radio-frequency discharge and gallium arsenide, Russ. Microelectron., 2016, vol. 45, no. 5, pp. 345–349.