Investigating the Electrothermal Characteristics of Partially Depleted Submicron SOI CMOS Transistors in an Extended Temperature Range-Reference-Cited by-同舟云学术

Investigating the Electrothermal Characteristics of Partially Depleted Submicron SOI CMOS Transistors in an Extended Temperature Range

Published:2020-01 Issue:1 Volume:49 Page:30-36
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Rumyantsev S. V.,Novoselov A. S.,Masal’skii N. V.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063739720010102.pdf

Reference12 articles.

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2. Wang, L., Fjeldly, T., Iniguez, B., Slade, H., and Shur, M., Self-heating and kink effects in a-Si:H thin film transistors, IEEE Trans. Electron. Dev., 2000, vol. 47, no. 2, pp. 387–397.

3. Watson, J. and Castro, G., High temperature electronic pose design and reliability challenge, Analog Dialog, 2012, vol. 46. http://www.analog.com/. Accessed August 22, 2018.

4. Babkin, S.I., Volkov, S.I., and Glushko, A.A., Transistor with a metal—oxide—semiconductor structure on a silicon substrate on an insulator, RF Patent no. 2477904, 2013.

5. Volkov, S.I., Experience in the development of radiation-resistant libraries and VLSI using specialized CAD. http://www.myshared.ru/slide/467770/. Accessed 2018.

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