Author:
Rumyantsev S. V.,Novoselov A. S.,Masalsky N. V.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Fiegna, C., Yang, Y., Sangiorgi, E., and O’Neill, A.G., Analysis of self-heating effects in ultra thin body SOI MOSFETs by device simulation, IEEE Trans. Electron. Dev., 2008, vol. 55, no. 1, pp. 233–244.
2. Neamen, D., Semiconductor Physics and Devices: Basic Principles, New York: McGraw-Hill, 2011, p. 760.
3. Watson, J. and Castro, G., High temperature electronic pose design and reliability challenge, Analog Dialog, 2012, vol. 46. http://www.analog.com/. Accessed March 12, 2019.
4. Wolpert, D. and Ampadu, P., Managing Temperature Effects in Nanoscale Adaptive System, New York: Springer, 2012.
5. Rumyantsev, S.V., Novoselov, A.S., and Masal’skii, N.V., Investigating the electrothermal characteristics of partially depleted submicron SOI CMOS transistors in an extended temperature range, Russ. Microelectron., 2020, vol. 49, no. 1, pp. 30–36.
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