Temperature-Frequency Study of Germanium Selenide Memristors with a Self-Directed Current-Conducting Channel-Reference-Cited by-同舟云学术

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Temperature-Frequency Study of Germanium Selenide Memristors with a Self-Directed Current-Conducting Channel

Published:2022-04 Issue:2 Volume:51 Page:59-67
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Aleshin A. N.,Ruban O. A.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1134/S1063739722020020.pdf

Reference20 articles.

1. Chua, L.O., Memristor—missing circuit element, IEEE Trans. Circuit Theory, 1971, vol. 18, pp. 507–519.

2. Chua, L.O. and Kang, S.M., Memristive devices and systems, Proc. IEEE, 1976, vol. 64, pp. 209–223.

3. Yang, J.J., Strukov, D.B., and Stewart, D.R., Memristive devices for computing, Nat. Nanotechnol., 2013, vol. 8, no. 1, pp. 13–24.

4. Bersuker, G., Gilmer, D.C., Veksler, D., Kirsch, P., Vandelli, L., Padovani, A., Larcher, L., McKenna, K., Shluger, A., Iglesias, V., Porti, M., and Nafrıa, M., Metal oxide resistive memory switching mechanism based on conductive filament properties, J. Appl. Phys., 2011, vol. 110, p. 124518.

5. Kim, K.M., Jeong, D.S., and Hwang, C.S., Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook, Nanotecnology, 2011, vol. 22, p. 254002.

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Activation processes during operation of an Ag/SnSe/Ge2Se3/W ion memristor with a self-forming current-conducting channel;Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering;2023-09-22

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