A method for registration of multiple cell upsets in high capacity memory cells induced by single nuclear particles

Author:

Boruzdina A. B.,Ulanova A. V.,Chumakov A. I.,Yanenko A. V.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Effects of space radiation on resistive memory and comparison with other types of non-volatile memory;2022 Moscow Workshop on Electronic and Networking Technologies (MWENT);2022-06-09

2. Features of the Software Component of the Memory Test SetupBased on the Object-Oriented Approach in LabVIEW Development Environment;2021 International Siberian Conference on Control and Communications (SIBCON);2021-05-13

3. Two-Parameter Model for SEE Rate Estimation;2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS);2018-09

4. SEE rate estimation based on diffusion approximation of charge collection;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2018-03

5. A simple analytical model of single-event upsets in bulk CMOS;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2017-06

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