Dominant mechanisms of transient-radiation upset in CMOS RAM VLSI circuits realized in SOS technology-Reference-Cited by-同舟云学术

Dominant mechanisms of transient-radiation upset in CMOS RAM VLSI circuits realized in SOS technology

Published:2006-05 Issue:3 Volume:35 Page:162-176
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Kirgizova A. V.,Nikiforov A. Y.,Grigor’ev N. G.,Poljakov I. V.,Skorobogatov P. K.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S106373970603005X.pdf

Reference17 articles.

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2. Massengill, L.W. and Diehl-Nagle, S.E., Transient Radiation Upset Simulations of CMOS Memory Circuits, IEEE Trans. Nucl. Sci., 1984, vol. 31, no. 6, pp. 1337–1343.

3. Nikiforov, A.Y., Model of the Radiation Response of a CMOS/SOI Building Block, Elektronnye ustroistva predvaritel’noi obrabotki dannykh (Data-Preprocessing Electronics), Agakhanyan, T.M., Ed., Moscow: Energoatomizdat, 1990, pp. 7–13.

4. Nikiforov, A.Y. and Poljakov, I.V., Test CMOS/SOS RAM for Transient Radiation Upset Comparative Research and Failure Analysis, IEEE Trans. Nucl. Sci., 1995, vol. 42, no. 6, pp. 2138–2142.

5. Nikiforov, A.Y. and Poljakov, I.V., Comparative Experimental Study of CMOS/SOS RAM Data Retention under Transient Irradiation, Vopr. At. Nauki Tekh., Ser. Fiz. Radiatsionnogo Vozdeistviya Radioelektron. Apparaturu, 1995, issues 1–2, pp. 99–102.

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