Author:
Sogoyan Armen V.,Chumakov Alexander I.,Smolin Anatoly A.,Ulanova Anastasia V.,Boruzdina Anna B.
Subject
Instrumentation,Nuclear and High Energy Physics
Reference29 articles.
1. Analysis of multiple bit upsets (MBU) in CMOS SRAM;Musseau;IEEE Trans. Nucl. Sci.,1996
2. Prediction of multiple cell upset induced by heavy ions in a 90nm bulk SRAM;Correas;IEEE Trans. Nucl. Sci.,2009
3. A method for registration of multiple cell upsets in high capacity memory cells induced by single nuclear particles;Boruzdina;Russian Microelectron.,2016
4. Verification of SRAM MCUs calculation technique for experiment time optimization;Boruzdina,2013
5. SEE testing results for RF and microwave ICs, in;Chukov,2014
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Single event rate estimation based on limited experimental data;2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS);2020-10
2. SAFIIRA: A heavy-ion multi-purpose irradiation facility in Brazil;Review of Scientific Instruments;2020-05-01
3. Laser Method of Evaluating Parameters of LSI Sensitivity to the Impact of Single Ions;Russian Microelectronics;2018-05
4. SEE rate estimation based on diffusion approximation of charge collection;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2018-03