Laser Method of Evaluating Parameters of LSI Sensitivity to the Impact of Single Ions-Reference-Cited by-同舟云学术

Laser Method of Evaluating Parameters of LSI Sensitivity to the Impact of Single Ions

Published:2018-05 Issue:3 Volume:47 Page:175-180
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Chumakov A. I.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1134/S1063739718030058/fulltext.html

Reference16 articles.

1. Chumakov, A.I., Deistvie kosmicheskoi radiatsii na IS (Effect of Space Radiation on Spacecrafts), Moscow: Radio i Svyaz’, 2004.

2. Radiatsionnaya stoikost’ izdelii EKB: Nauchnoe izdanie (Radiation Hardness of Electronic Components), Chumakov, A.I., Ed., Moscow: NIYaU MIFI, 2015.

3. Metodologiya obespecheniya stoikosti bortovoi apparatury kosmicheskikh apparatov k vozdeistviyu ioniziruyushchego izlucheniya kosmicheskogo prostranstva (Methodology of Ensuring the Durability of Space Vehicle On-Board Equipment to the Effects of Ionizing Radiation from Outer Space), Yakovlev, M.V., Ed., Moscow: MIFI, 2017.

4. Boruzdina, A.B., Sogoyan, A.V., Smolin, A.A., Ulanova, A.V., Gorbunov, M.S., and Chumakov, A.I., Temperature dependence of MCU sensitivity in 65 nm CMOS RAM, IEEE Trans. Nucl. Sci., 2015, vol. 62, no. 6, pp. 2860–2866.

5. Sogoyan, A.V. and Chumakov, A.I., Diffusion model of the ionization response of LSI elements under exposure to heavy charged particles, Russ. Microelectron., 2017, vol. 46, no. 4, pp. 282–289.

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