Author:
Levin M. N.,Tatarintsev A. V.,Makarenko V. A.,Gitlin V. R.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference30 articles.
1. Felix, J.A., Schwank, J.R., Fleetwood, D.M., Shaneyfelt, M.R., and Gusev, E.P., Effects of Radiation and Charge Trapping on the Reliability of High-k Gate Dielectrics, Microelectron. Reliab., 2004, vol. 44, pp. 563–575.
2. Soelkner, G., Kaindl, W., Shulze, H.-J., and Wachutka, G., Reliability of Power Electronic Devices against Cosmic Radiation-Induced Failure, Microelectron. Reliab., 2004, vol. 44, pp. 1399–1406.
3. Raparla, V.A.K., Lee, S.C., Schrimpf, R.D., Fleetwood, D.M., and Galloway, K.F., A Model of Radiation Effects in Nitride-Oxide Films for Power MOSFET Applications, Solid-State Electron., 2003, vol. 47, pp. 775–783.
4. Islam, S.S., Klan, M.R., and Anwar, A.F.M., Effects of Impurity Traps on Gate Current and Trapped Charge in MOSFETs, Solid-State Electron., 2003, vol. 47, pp. 333–337.
5. Levin, M.N., Gitlin, V.R., Tatarintsev, A.V., Ostrouhov, S.S., and Kadmensky, S.G., X-ray and UV Adjustment of Threshold Voltage in MOS-Circuit Manufacture, Mikroelektronika, 2002, vol. 31, no. 6, pp. 408–413.
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