Electroluminescent characteristics of InGaAsSb/GaAlAsSb heterostructure Mid-IR LEDs at high temperatures-Reference-Cited by-同舟云学术

Electroluminescent characteristics of InGaAsSb/GaAlAsSb heterostructure Mid-IR LEDs at high temperatures

Published:2011-04 Issue:4 Volume:56 Page:520-525
ISSN:1063-7842
Container-title:Technical Physics
language:en
Short-container-title:Tech. Phys.

Author:

Petukhov A. A.,Zhurtanov B. E.,Molchanov S. S.,Stoyanov N. D.,Yakovlev Yu. P.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/S1063784211040232.pdf

Reference14 articles.

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4. A. P. Astakhova, E. A. Grebenshchikova, E. V. Ivanov, A. N. Imenkov, E. V. Kunitsina, Ya. A. Parkhomenko, and Yu. P. Yakovlev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 38, 1466 (2004) [Semiconductors 38, 1419 (2004)].

5. T. N. Danilova, B. E. Zhurtanov, A. N. Imenkov, and Yu. P. Yakovlev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 39, 1281 (2005) [Semiconductors 39, 1235 (2005)].

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