Author:
Galiev G. B.,Khabibullin R. A.,Ponomarev D. S.,Yachmenev A. E.,Bugaev A. S.,Maltsev P. P.
Subject
General Engineering,Condensed Matter Physics,General Materials Science
Reference7 articles.
1. A. Dyskin, S. Wagner, D. Ritter, and I. Kallfass, “An active 60–90 GHz single pole double throw switch MMIC,” J. Infrared Millim Terahz Waves 35, 412–417 (2014).
2. R. A. Khabibullin, I. S. Vasil’evskii, G. B. Galiev, E. A. Klimov, L. P. Avakyanz, P. Yu. Bokov, and A. V. Chervyakov, “The built-in electric field in P-HEMT heterostructures with near-surface quantum wells AlxGa1-x As/InyGa1-y As/GaAs,” J. Phys.: Conf. Ser. 345, 012015 (2012).
3. V. A. Kulbachinskii, N. A. Yuzeeva, G. B. Galiev, E. A. Klimov, I. S. Vasil’evskii, and R. A. Khabibullin, “Electron effective masses in InGaAs quantum well with InAs and GaAs inserts,” Semicond. Sci. Technol. 27, 035021 (2012).
4. Y. Song, S. Wang, I. Tangring, Z. Lai, and M. Sadeghi, “Effects of doping and grading slope on surface and structure of metamorphic InGaAs buffers on GaAs substrates,” J. Appl. Phys. 106, 123531 (2009).
5. D. V. Lavrukhin, A. E. Yachmenev, R. R. Galiev, R. A. Khabibullin, D. S. Ponomarev, Yu. V. Fedorov, and P. P. Maltsev, “MHEMT with a power gain cut-off frequency of f max = 0.63 THz on the basis of a In0.42Al0.58As/In0.42Ga0.58As/In0.42Al0.58As/GaAs nanoheterostructure,” Semiconductors 48, 69–72 (2014).
Cited by
8 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献