On the possibility of creating a superfast-recovery silicon carbide diode-Reference-Cited by-同舟云学术

On the possibility of creating a superfast-recovery silicon carbide diode

Published:2002-07 Issue:7 Volume:28 Page:544-546
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Grekhov I. V.,Ivanov P. A.,Konstantinov A. O.,Samsonova T. P.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/1.1498779.pdf

Reference10 articles.

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2. Y. Sugawara, K. Asano, R. Singh, et al., in Silicon Carbide and Related Materials, 1999, Ed. by C. H. Carter, R. P. Devaty, and G. S. Rohrer (Trans Tech Publications, Aedermannsdorf, Switzerland, 2000), Mater. Sci. Forum 338–342, 1371 (2000).

3. A. K. Agarwal, S. H. Ryu, R. Singh, et al., in Silicon Carbide and Related Materials, 1999, Ed. by C. H. Carter, R. P. Devaty, and G. S. Rohrer (Trans Tech Publications, Aedermannsdorf, Switzerland, 2000), Mater. Sci. Forum 338–342, 1387 (2000).

4. S. H. Ryu, A. K. Agarwal, R. Singh, et al., IEEE Electron Device Lett. 22, 124 (2001).

5. I. V. Grekhov, V. M. Efanov, A. F. Kardo-Sysoev, et al., Solid-State Electron. 28, 597 (1985).

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