Characteristics comparison of SiC and Si drift step recovery diode-Reference-Cited by-同舟云学术

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Characteristics comparison of SiC and Si drift step recovery diode

Published:2023-10 Issue: Volume:6 Page:100042
ISSN:2772-3704
Container-title:Power Electronic Devices and Components
language:en
Short-container-title:Power Electronic Devices and Components

Author:

Yang Zewei,Liang Lin,Yan Xiaoxue

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Reference24 articles.

1. SLIM, short-pulse technology for high gradient induction accelerators;Arntz,2009

2. Drift step recovery diode transmitter for high-power GPR design;Prokhorenko,2000

3. Semiconductor switches of laser pumping pulses of nanosecond duration;Korotkov;Instruments and Experimental Techniques,2009

4. A compact inductive type pulse generator using diodes as opening switch;Min,2005

5. Failure case studies of fast ionization dynistors;Huang;Microelectronics and Reliability,2021

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Analytic Model of the 4H-SiC DSRD Output Pulse;2024 IEEE International Conference on Plasma Science (ICOPS);2024-06-16

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