Dynamic Electrical Characteristics of 4H-SiC Drift Step Recovery Diodes of High Voltage-Reference-Cited by-同舟云学术

Dynamic Electrical Characteristics of 4H-SiC Drift Step Recovery Diodes of High Voltage

Published:2022-05 Issue:5 Volume:50 Page:1276-1281
ISSN:0093-3813
Container-title:IEEE Transactions on Plasma Science
language:
Short-container-title:IEEE Trans. Plasma Sci.

Author:

Yang Zewei¹^ORCID,Liang Lin¹^ORCID,Yan Xiaoxue¹^ORCID

Affiliation:

1. State Key Laboratory of Advanced Electromagnetic Engineering and Technology, School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan, China

Funder

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Condensed Matter Physics,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/27/9771291/09758629.pdf?arnumber=9758629

Reference28 articles.

1. On the possibility of creating a superfast-recovery silicon carbide diode

2. High-Voltage Ultra-Fast Pulse Diode Stack Based on 4H-SiC

3. 30 kV Pulse Diode Stack Based on 4H-SiC

4. Electrical Performance of 4H-SiC Based Drift Step Recovery Diodes

5. A study of a low-voltage drift step recovery diode

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