Effect of the Electrochemical Modification of a Thin Ga(In)As Cap Layer on the Energy Spectrum of InAs∕GaAs Quantum Dots-Reference-Cited by-同舟云学术

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Effect of the Electrochemical Modification of a Thin Ga(In)As Cap Layer on the Energy Spectrum of InAs∕GaAs Quantum Dots

Published:2005 Issue:1 Volume:39 Page:37
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Karpovich I. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1852641.pdf

Reference10 articles.

1. H. Saito, K. Nishi, and S. Sugou, Appl. Phys. Lett. 73, 2742 (1998).

2. S. Fafard, Appl. Phys. Lett. 76, 2707 (2000).

3. K. Nishi, H. Saito, S. Sugou, and J.-S. Lee, Appl. Phys. Lett. 74, 1111 (1999).

4. I. A. Karpovich, B. N. Zvonkov, S. B. Levichev, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 38, 448 (2004) [Semiconductors 38, 431 (2004)].

5. B. N. Zvonkov, I. A. Karpovich, N. V. Baidus’, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 35, 92 (2001) [Semiconductors 35, 93 (2001)].

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparison of optoelectronic properties of InAs/GaAs quantum dots grown under different conditions by metalorganic vapor phase epitaxy;Journal of Luminescence;2014-03

2. Optoelectronic properties of heteronanostructures with combined layers of In(Ga)As/GaAs quantum wells and dots;Semiconductors;2013-12

3. Effect of electric field, temperature, and defect formation on processes of nonequilibrium carrier emission from InAs/GaAs quantum dots;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2012-05

4. ZnO films obtained by photoelectrothermal oxidation, their properties, and possibilities of practical application;Crystallography Reports;2008-11-21

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