Comparison of optoelectronic properties of InAs/GaAs quantum dots grown under different conditions by metalorganic vapor phase epitaxy-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Comparison of optoelectronic properties of InAs/GaAs quantum dots grown under different conditions by metalorganic vapor phase epitaxy

Published:2014-03 Issue: Volume:147 Page:59-62
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Levichev S.,Volkova N.S.,Gorshkov A.P.,Zdoroveishev A.V.,Vikhrova O.V.,Utsyna E.V.,Istomin L.A.,Zvonkov B.N.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference19 articles.

1. Dual wavelength InGaN/GaN multi-quantum well LEDs grown by metalorganic vapor phase epitaxy

2. Quantum Dot Heterostructures;Bimberg,1999

3. High-power quantum-dot lasers at 1100 nm

4. Spectroscopy of layers of InAs in GaAs across the transition from layered to three-dimensional growth

5. Effect of the Electrochemical Modification of a Thin Ga(In)As Cap Layer on the Energy Spectrum of InAs∕GaAs Quantum Dots

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Diagnostic of the Bimodal Distribution of InAs/GaAs Quantum Dots by Means of a Simple Nondestructive Method Based on the Photoelectrical Spectroscopy;Nano;2016-09-29

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP