Characteristic features of the accumulation of vacancy-and interstitial-type radiation defects in dislocation-free silicon with different oxygen contents-Reference-Cited by-同舟云学术

Characteristic features of the accumulation of vacancy-and interstitial-type radiation defects in dislocation-free silicon with different oxygen contents

Published:1997-04 Issue:4 Volume:31 Page:340-343
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Kolkovskii I. I.,Luk’yanitsa V. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187183.pdf

Reference19 articles.

1. V. V. Emtsev and T. V. Mashovets, Impurities and Point Defects in Semiconductors [in Russian], Moscow (1981).

2. G. D. Watkins and J. W. Corbett, Phys. Rev. 121, 1001 (1961).

3. L. I. Murin, Phys. Status Solidi A 93, K147 (1986); 101, K107 (1987).

4. N. V. Kuznetsov and G. G. Solov’ev, Radiation Resistance of Silicon [in Russian], Moscow (1989).

5. R. F. Vitman, N. A. Vitovskii, A. A. Lebedev, T. V. Mashovets, Fiz. Tekh. Poluprovodn. 24, 45 (1990) [Sov. Phys. Semicond. 24, 27 (1990)].

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